NVBG1000N170M1 Datasheet

Features and Benefits

• Typ. RDS(on) = 960 mW @ VGS = 20 V
• Ultra Low Gate Charge (QG(tot) = 14 nC)
• High Speed Switching with Low Capacitance (Coss = 11 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inte.